Abstract
In this paper, the results show that the avalanche mode of GaAs photoconductive semiconductor switches (PCSS) requires only a low trigger optical energy of 0.567 nJ to achieve. At the bias electric field is 94 kV/cm, a trigger optical energy with sub-Nano Joule is used to trigger the PCSS, and the multiplication rate can be as high as 988. We have presented avalanche delay characteristics under the different bias electric voltage, and the physical mechanism of the avalanche delay time is analyzed. This article shows a high multiplication rate ultrafast pulse source with low-energy triggering.
Highlights
Avalanche photoconductive semiconductor switches (PCSSs) is widely applied in beam accelerators, ultra-wide band microwave pulses, and in many electrical and optical short pulse applications [1]–[3]
CHARACTERISTICS OF AVALANCHE DELAY When the electric field is lower than the avalanche threshold electric field (7.5 kV/cm) [10], this electric field strength is the minimum electric field threshold required to enter avalanche mode. This electric field strength, the GaAs PCSS works in a linear mode, each photon generates a pair of electron-hole pairs, and the conductivity of the conducting material has a linear relationship with the trigger optical energy
The first electric pulse is mainly caused by photo-generated carriers, and the second electric pulse is caused by the avalanche multiplication of carriers
Summary
Avalanche photoconductive semiconductor switches (PCSSs) is widely applied in beam accelerators, ultra-wide band microwave pulses, and in many electrical and optical short pulse applications [1]–[3]. The avalanche PCSS operating mode relies on the photon-induced carrier multiplication process in GaAs materials. In 1997, avalanche operation of GaAs PCSS with the trigger optical energy of 2 nJ was reported by Zutavern et al [7]. When the laser energy is in the range of nJ and the electric field intensity is in the about of 78 kV/cm, the multiplication rate is less than 100. When trigger energies of 24.5 nJ and 8 nJ were used to trigger the switch into avalanche mode, the required bias electric fields are as high as 76 kV/cm and 78 kV/cm [8]–[9]. A high multiplication rate and a short pulse simultaneously at low trigger optical energy represents a challenging task. A high multiplication rate of 998 of the GaAs PCSS at the trigger optical energy of 0.567 nJ is demonstrated.
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