99.9% BPD Free 4H-SiC Epitaxial Layer with Precisely Controlled Doping upon 3 x 150 mm Hot-Wall CVD

Abstract

Epitaxial growth of 4H-SiC on 150 mm wafers has been investigated using experimental results and numerical simulations toward the goal of BPDs reduction and doping uniformity control in the epitaxial layer. We have reported analyses of the temperature distribution dependence of the doping uniformity and BPDs propagations on the 3 x 150 mm multi-wafer CVD epitaxial growth. By optimizing epitaxial growth conditions, we have demonstrated an excellent doping and thickness uniformity and a 99.9% BPD free region, simultaneously.