980 nm tapered lasers with photonic crystal structure for low vertical divergence

Abstract

High power tapered lasers with nearly diffraction-limited beam quality have attracted much attention in numerous applications such as nonlinear frequency conversion, optical pumping of solid-state and fiber lasers, medical treatment and others. However, the large vertical divergence of conventional tapered lasers is a disadvantage, which makes beam shaping difficult and expensive in applications. Diode lasers with photonic crystal structure can achieve a large mode size and a narrow vertical divergence. In this paper, we present tapered lasers with photonic crystal structure emitting at 980 nm. The epitaxial layer is grown using metal organic chemical vapor deposition. The device has a total cavity length of 2 mm, which consists of a 400-um long ridge-waveguide section and a 1600-um long tapered section. The taper angle is 4°. An output power of 3.3 W is achieved with a peak conversion efficiency of 35% in pulsed mode. The threshold current is 240 mA and the slope efficiency is 0.78 W/A. In continuous wave mode, the output power is 2.87 W, which is limited by a suddenly failure resulting from catastrophic optical mirror damage. The far field divergences with full width at half maximum are 12.3° in the vertical direction and 2.9° in the lateral direction at 0.5 A. At high injection level the vertical divergence doesn’t exceed 16°. Beam quality factor M2 is measured based on second moment definition in CW mode. High beam quality is demonstrated by M2 value of less than 2 in both vertical and lateral directions.