Abstract

In this paper, a one-dimensional photonic crystal with a defective layer is designed, and the single-layer BP is embedded in the CeO_2 and SiO_2 structure of the one-dimensional photonic crystal, and the electric field distribution and magnetic field distribution in the one-dimensional photonic crystal are studied. The electric field intensity distribution at the defect layer of the one-dimensional photonic crystal is significantly enhanced. The magnetic field strength of the upper and lower layers of the defect layer is enhanced cons. Changes in the wavelength of incident light affect the absorption rate of one-dimensional photonic crystals. When the wavelength of incident light is 976 nm, the absorption rate of one-dimensional photonic crystals is robust. The absorption rate change of a 976 nm symmetrical one-dimensional photonic crystal was studied by changing its incidence angle based on its wavelength. Numerical simulation results show that the absorption rate of one-dimensional photonic crystals can be controlled by adjusting the wavelength of the incident light and can also be actively controlled by adjusting the angle of incidence, which increases the channel of interaction between light and matter. The one-dimensional photonic crystal containing the defective layer has a maximum absorption rate of 56.65% at a wavelength of 976 nm and an incidence angle of 0°. This simple sheet structure can be applied to various optical devices, such as ultra-fast light switches, solar cells, and other fields.

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