Abstract
In this paper, an indium‐gallium‐zinc oxide (IGZO) based phototransistor with an electrohydrodynamic (EHD) jet printed poly (3,4‐ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) absorption layer has been developed for the absorption of visible light. The PEDOT:PSS absorption layerforms a p‐n junction with IGZO, enhancing the photoresponse through selective carrier transfer of photogenerated carriers. As a result, the proposed phototransistor exhibits improved optoelectronic characteristics such as photoresponsivity of 8.40 × 102 A/W, photosensitivity of 1.12 × 107, detectivity of 8.05 × 1011 Jones under the green light (532 nm) illumination of 5 mW/mm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
