Abstract
Highly integrated Gallium Arsenide (GaAs) chips of preamplifiers and summing amplifiers have been exposed to high fluence of fast neutrons and γ-dose at the IBR-2 reactor in Dubna. A stable performance of the electronics has been demonstrated up to a fluence of 5×1014ncm-2 and a γ-dose of 55 kGy. The radiation hardness tests confirm the applicability of the preamplifiers for more than 10 years operation in the ATLAS hadronic end-cap calorimeter at LHC.
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