Abstract
AbstractWe have demonstrated that thin film transistor backplanes for AMOLED could be fabricated with line‐scan sequential lateral solidification (SLS) process. with 4 μm × 730 mm single laser beamlet, directional and two‐shot SLS processes were carried out to make polycrystalline Si films. The geometry for driving TFTs, which can provide sufficient uniformity of TFT performances, is that the source‐drain direction is perpendicular to the grain growth direction. 14″ WXGA (1366×RGB×768) AMOLEDsfor TV application were fabricated by utilizing different TFT geometry for driving TFTs and switching TFTs. The advantages of the line‐scan SLS system are (1) it can provide higher productivity than the conventional laser system and (2) large displays over 50″ can be manufactured without scan overlap area.
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