Abstract
We propose indium gallium zinc oxide (IGZO) phototransistors with an extended wavelength detection range by a capping layer composed of hafnium oxide (HfO2). A HfO2 capping layer enables the generation of oxygen vacancies by strongly attracting oxygen ions in the back channel of IGZO. IGZO phototransistors with the capping layer exhibit improved optoelectronic characteristics, such as photoresponsivity of 149.48 A/W, photosensitivity of 1.17 × 106, detectivity of 3.64 × 1010 Jones under the green light (532 nm) illumination of 10 mW/mm2.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
