Abstract
Antimony selenide (Sb2Se3) has a one-dimensional (1D) crystal structure comprising of covalently bonded (Sb4Se6)n ribbons stacking together through van der Waals force. This special structure results in anisotropic optical and electrical properties. Currently, the photovoltaic device performance is dominated by the grain orientation in the Sb2Se3 thin film absorbers. Effective approaches to enhance the carrier collection and overall power-conversion efficiency are urgently required. Here, we report the construction of Sb2Se3 solar cells with high-quality Sb2Se3 nanorod arrays absorber along the [001] direction, which is beneficial for sun-light absorption and charge carrier extraction. An efficiency of 9.2%, which is the highest value reported so far for this type of solar cells, is achieved by junction interface engineering. Our cell design provides an approach to further improve the efficiency of Sb2Se3-based solar cells.
Highlights
Sb2Se3 crystal consists of ribbon-like (Sb4Se6)n units linked through van der Waals forces in the [010] and [100] direction, while strong covalent Sb–Se bonds make the units holding together in the [001] direction[3,15]
The surface and cross-sectional morphologies of the as-deposited Sb2Se3 nanorod arrays were characterized by scanning electron microscope (SEM) in Fig. 1a, b, respectively
It is important to note that only strong and diffraction peaks are observed in the X-ray diffraction (XRD) pattern, suggesting that the Sb2Se3 nanorod arrays have a preferred orientation along the c-axis direction
Summary
Sb2Se3 crystal consists of ribbon-like (Sb4Se6)n units linked through van der Waals forces in the [010] and [100] direction, while strong covalent Sb–Se bonds make the units holding together in the [001] direction[3,15]. This apparently directiondependent bonding nature will result in significant anisotropy. The interface engineering with TiO2 leads to an independently verified record power-conversion efficiency of 9.2% for the Sb2Se3 solar cells (ZnO:Al/ZnO/CdS/TiO2/Sb2Se3 nanorod arrays/MoSe2/Mo) with an absorber thickness over 1000 nm while maintaining a high fill factor of 70.3%. This work can facilitate the preparation and application of patterned 1D Sb2Se3-based nanostructures for applications in sensor arrays, piezoelectric antenna arrays, and other electronic and optoelectronic devices
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