9‐1: Fabrication of Lateral Crystal Si on Cu Bottom‐Gate Structure via Blue‐Laser Diode Annealing (BLDA)

Abstract

We report that Si lateral crystal is fabricated on bottom gate cupper electrode with having no crack and ablation of the electrode by blue laser diode annealing (BLDA). In CW laser annealing, the long irradiation time and wide beam width induce some damage to glass substrate, electrode and membrane, so our research adopted a narrow beam size (33 μm × 8.25 μm) and fast scanning speed (over 500 mm/s) in order to reduce the amount of generated thermal in annealing. In our presentation, evaluation of Si crystals fabricated on Cu electrodes, cross‐section SEM results indicating no metal damage and relationship between laser irradiation time and the damage are discussed. Our BLDA system can realize high TFT mobility and which is composed of inexpensive beam heads, therefore it is expected to be applied to Mini LED back light and OLED etc.