Abstract
We report that Si lateral crystal is fabricated on bottom gate cupper electrode with having no crack and ablation of the electrode by blue laser diode annealing (BLDA). In CW laser annealing, the long irradiation time and wide beam width induce some damage to glass substrate, electrode and membrane, so our research adopted a narrow beam size (33 μm × 8.25 μm) and fast scanning speed (over 500 mm/s) in order to reduce the amount of generated thermal in annealing. In our presentation, evaluation of Si crystals fabricated on Cu electrodes, cross‐section SEM results indicating no metal damage and relationship between laser irradiation time and the damage are discussed. Our BLDA system can realize high TFT mobility and which is composed of inexpensive beam heads, therefore it is expected to be applied to Mini LED back light and OLED etc.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
