850-nm diode lasers with different ways of compensating for internal mechanical stresses in an AlGaAs:P/GaAs heterostructure

Abstract

MOS hydride epitaxy is used to grow AlGaAs/GaAs heterostructures both without compensation and with compensation for internal mechanical stresses by the introduction of phosphorus into different layers of the heterostructure; this compensation affects the lattice parameter of the layer and, thus, influences the value of internal stresses in the entire laser hetetrostructure. Multimode mesastripe laser diodes (with an aperture of 100 μm) emitting at a wavelength of 850 nm are fabricated on the basis of the above structures; the properties of these diodes are studied. It is shown that the structures with compensated internal mechanical stresses exhibit a linear power-current characteristic if the pump currents do not exceed those corresponding to the maximum of the output power. Such structures with compensated internal mechanical stresses exhibit larger values for the characteristic temperatures T0 and T1 in comparison with structures with uncompensated internal mechanical stresses.