809 MEMSデバイスにおける高密度実装に対応した貫通配線技術の開発(OS8-(3)オーガナイズドセッション《マイクロマシンとG-MEMS/N-MEMS》)

Abstract

We developed a through-via electrode for high-density MEMS packaging. The specifications of the through-via electrode for MEMS devices are hermetic sealing reliability. To provide these specifications, we used a doped poly-silicon as a filler material. The characteristics of the doped poly-silicon are as follows. First, it has the same CTE as the silicon substrate, second, it can be used in the LPCVD method to provide uniform deposition, and third, resistance can be controlled by using a dopant. As a result, the hermetic sealing performance found from the results of helium leak testing was less than 4.9 × 10^<-9> Pa m^3/s. We could thus obtain a through-via electrode for MEMS packaging by using doped poly-silicon as a filler material.