Abstract
In order to study the output characteristics of 808 nm InGaAlAs vertical cavity surface emitting laser( VCSEL) array at different temperature,the InGaAlAs VCSEL temperature shift is calculated under the temperature-dependent Sellmeier equation. 2 × 2 arrays of 808 nm VCSEL are fabricated with non-closed structure. Each emitter diameter is 60 μm. Lasing wavelength,optical power and the threshold current are measured by changing the temperature of heat sink. The maximum output power reaches 56 mW in the pulse width of 50 μs,and the repetition frequency of 100 Hz at 20 ℃. The central wavelength is 808. 38 nm,and the full width at half maximum is 2. 5 nm, continuous output power reaches 22 mW,the output power decreases rapidly above 50 ℃,the temperature shift is 0. 055 nm / ℃. Experimental temperature shift is consistent with the theoretical value.
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