Abstract
We have developed equipment to measure optical birefringences in commercial LEC-grown GaAs (100) wafers by using a photoelastic modulator and a polarized laser. A He-Ne infrared laser was utilized as the light source for measurements of strain-induced birefringence in the GaAs wafers. The residual strain and stress components were calculated from the values obtained experimentally. The residual stress profiles have been evaluated to explain the correlation between the residual stress and thermal-stress-induced dislocation. It was found that the optical birefringence equipment developed for this study possessed the needed sensitivity to evaluate residual stress profiles of commercial GaAs (100) wafers. We have discovered the relation between the crystal gliding (translation gliding) and the process-induced stressesat 700℃ on GaAs (100) wafers.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
