Abstract
Recently, in order to apply single-molecule devices and nonvolatile memory devices, mass-production techniques for nanogap electrodes have been required. Electromigration method is one of the most useful procedures for fabrication of nanogap structure, gap size of which is below 5 nm. However, because large-current flow and long-time consuming are also necessary for the method, this is not suitable for mass-production. Therefore, we devised a new fabrication technique to adapt electromigration during metal deposition. This technique achieved simultaneously fabrication of nanogap structure and metal electrodes by low-current electromigration.
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