Abstract
The performance of the GaAs photoconductive semiconductor switch (PCSS) has been optimized in the current-charged transmission-line configuration to produce a power gain of 45 with an output pulse of 80 kW. The fast falltime of the switch resistance produced by the specially tailored optical pulse that actives the PCSS is mainly responsible for the high power gain achieved. An effect similar to lock-on was found to limit the output voltage to approximately 2 kV.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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