Abstract
An 80 Gbit/s high-speed multichip ATM switching module for broadband ISDN is described. The module employs a copper-polyimide MCM with four-layer copper-polyimide signal transmission layers and 15-layer ceramic power supply layers. All MCMs are interconnected by 98-highway flexible printed circuit connectors. Four Si-bipolar VLSIs are mounted on an MCM using the 150 µm, very-thin-pitch, outer lead TAB technique. In addition, a high-performance heat-pipe cooling technique is adopted. The switching module handles ATM cell rates of up to 80 Gbit/s and so will support the future B-ISDN.
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