Abstract
Using GaAs-on-InP heteroepitaxial technology, a 1.3 µm OEIC transmitter combining a BRS laser with two GaAs metal-semiconductor field-effect-transistors has been fabricated. The device design, fabrication processing and performance are described. 8 Gbit/s NRZ direct modulation is demonstrated. This is the highest bit rate ever reported for GaInAsP laser GaAs-on-InP transistor circuits.
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