Abstract
This work reports a fluorination method for metal oxide thin‐film transistors through a planarization process using fluorinated polyimides. The fluorine diffusion from the planarization layer to the channels enhances device performance and reduces process thermal budget. This method is useful for the cost‐effective production of active‐matrix flat‐panel display panels.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
