Abstract
In this work, a fully integrated, fully differential amplifier operating at 79 GHz using a high-speed Si/SiGe heterojunction bipolar technology is presented. This integrated circuit needs a single supply voltage and shows high performance such as high gain, excellent reverse isolation and low power consumption (90 mW at 3 V supply voltage). This result was achieved by using three cascaded cascode amplifiers as well as thin-film microstrip lines and MIM capacitors as reactive elements. In addition, the frequency of operation can be easily adjusted within a wide range by changing the length of the matching network (by using a focused ion beam or an ultrasonic manipulator). Because the measurement of differential ICs operating in the millimeter-wave domain is complex, a simple but efficient layout modification was utilized to easily measure single-ended the differential integrated circuit, also at these high frequencies.
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