Abstract
AbstractCompared with tilt transfer wet station, vertical etching system has a many advantages that are 50% space savings, higher throughput and good etch uniformity over an entire glass for thin film transistor application. The aim of the present work is to analysis on a vertical etching system to improve the process factors. The computational fluid dynamics analysis is used to testify the change of the etch uniformity as a function of tilt angle of the glass substrate.
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