Abstract
Tensile-strained active layer GaAs/AlGaAs separateconfinement- heterostructure quantum-well lasers are reported. These lasers oscillate in the 780 nm band in the TM mode by TM mode gain enhancement in the tensile-strained active layer. The threshold current density of single-quantum-well laser diodes increases rapidly with heatsink temperature. However, triple-quantum-well laser diodes with a cavity length of 485–110 μm oscillated with a threshold current density 1–4 and 30 kA/cm2.
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