Abstract
Distributed Bragg reflector Pb1−xSnxSe/ Pb1−x−yEuySnxSe double heterostructure stripe geometry diode lasers were fabricated using molecular beam epitaxy. We observed cw single mode operation between the heat-sink temperatures 66 and 81 K at λ≊7.8 μm with an average tuning rate of 0.8 cm−1/K. Single mode continuous tuning over a relatively wide range of 6 cm−1, with an average tuning rate of 0.026 cm−1/mA, was obtained at 77 K.
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