Abstract
In recent, research about the oxide semiconductor based photo sensor such as photosensitive oxide TFTs and diodes has been emphasized. In this study, we report a new photosensitive a‐IGZO diode for photo sensor in interactive display. The diode has high on/off ratio and low leakage current density of ~10‐9 A/cm2. Also, the diode has a great photosensitivity of ~107 and ~104 at reverse bias under ultra‐violet (UV) and visible light conditions, respectively.
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