Abstract
Amorphous oxide semiconductor (AOS) thin film transistors (TFTs) with various nitrogen-doped active layers were studied. Compared with the oxygen-doping, the nitrogen-doping technology could moderately rather than significantly suppress the oxygen vacancies in the channel. Importantly, the double-stacked channel layers (DSCL) including different nitrogen-doped AOS films were proposed and investigated, proving that the proper combination of the nitrogen doping and DSCL structure could effectively improve the electrical performance of AOS TFTs.
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