7572. The epitaxial growth on CaF 2 and BaF 2 single-crystals films on a sapphire substrate : M Barkai et al,Vacuum,41, 1990, 847–850

Abstract

While of considerable interest for the production of metallic alloys, high dose, heavy ion implantation is highly problematical, since the process is limited by sputtering effects. Sputtering is less significant, however, for light target materials, such as C and Al. This paper summarizes studies involving the use of light materials (such as C and Al) which act as slowly sputtering “sacrificial layers” when deposited on metallic targets prior to heavy ion implantation. The use of C and Al sacrificial coatings has enabled implanted ion retentions of 100% to be obtained in a number of ion-metal target systems, where the retentions in uncoated samples were as low as 20%. Ion implantation invariably leads to mixing at the sacrificial layer-metal target interface. This mixing may be detrimental in certain systems, so it is useful to be able to minimize or remove this mixed region. To achieve this, a number of techniques have been investigated: (1) removal of the mixed region in the latter stages of the implant; (2) using a barrier layer or chemical effects to minimize mixing at the sacrificial layer-metal interface; (3) choosing a sacrificial layer material which forms a mixed region which has desirable properties. The results of these investigations, for a number of different ion-target systems, are outlined in this paper.