Abstract
The design, fabrication process, and high temperature characteristics of a 4H-SiC rectifier with a 7.4 kV, 330 A (pulsed) capability is reported. A highly-doped p-type epitaxial anode layer and junction termination extension were used to obtain good on-state and stable reverse blocking characteristics. A forward voltage drop of 4.5 V was observed at 100 A/cm/sup 2/ (36 A). Measurements in the 25-200/spl deg/C range show little change in reverse leakage characteristics up to 4.5 kV. Reverse recovery measurements for a forward current density of 100 A/cm/sup 2/ show a modest 33% increase (from 18 to 24 A) in the peak reverse recovery current, and only a 113% increase (from 1.8 to 3.8 /spl mu/C) in Q/sub /spl pi// at 200/spl deg/C compared to 25/spl deg/C.
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