Abstract
AbstractThreshold voltage shifts of a‐IGZO TFTs on plastics against bias‐temperature stress were successfully reduced below 0.03 V, equivalent to those on glass substrates. We have developed an 11.7‐inch qHD (960xRGBx540) flexible bottom‐emission active‐matrix organic light‐emitting diode (AMOLED) driven by a‐IGZO TFT backplane fabricated on a transparent polyimide film.
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