Abstract
Contact potential is generated always when an oxide semiconductor grain is contacted with another with different work function (hetero-contact). A novel type oxide semiconductor gas sensor making use of contact potential is obtained when grains of an oxide semiconductor (sensing oxide) are packed with grains of another (highly doped oxide or metal) to achieve such particular packing structure that allows the hetero-contact to act as a main path of electron transport. With a change in gas ambient, contact potential changes beside the surface electron density and hence the gas response can be promoted largely by the change of mobility of electrons as compared with the conventional devices.
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