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Abstract

We investigated the effects of thin Si16O2 and Si18O2 interfacial layers on Pd2Si formation using He+ backscattering spectrometry and the 16O(d,α)14N and 18O(p, α)15N nuclear reactions. SiO2 films from 10 to 50 Å thick were formed on Si<100> substrates by 16O2 or 18O2 plasma oxidation. Nickel, palladium or platinum films from 1000 to 1400 Å thick were then evaporated onto this SiO2 layer and the samples were annealed in vacuum at temperatures ranging from 250 to 750 °C. The minimum temperature necessary for Pd2Si formation is approximately 400°C for about 24 Å of SiO2 compared with 600°C for Pt2Si and 650°C for Ni2Si formation. The ability of Pd2Si to form in the presence of an SiO2 interfacial layer is compared with that of Ni2Si and Pt2Si and is interpreted using the relative mobilities of the metals in SiO2 and the redistribution of the 18O during silicide formation.