726. A triode-rf-sputtering system for film deposition in the 10 −4 torr range : O Sagev, Vakuum-Technik, 20 (8), Dec 1971, 225–231 ( in German)

doi:10.1016/0042-207x(72)90706-3

726. A triode-rf-sputtering system for film deposition in the 10 −4 torr range : O Sagev, Vakuum-Technik, 20 (8), Dec 1971, 225–231 ( in German)

https://doi.org/10.1016/0042-207x(72)90706-3

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Journal: Vacuum

Publication Date: Jun 1, 1972

#Radioactive 31Si #Pt2Si Formation + Show 5 more

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Abstract

Radioactive 31Si(T12 = 2.62 h) and Rutherford backscattering were used to study Ni2Si, Pd2Si and Pt2Si formation, silicon self-diffusion in silicides and silicon epitaxy in the Si〈100〉/Pd2Si/Si (amorphous) system.

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