Abstract
This paper presents an investigation of the influence of nitrogen addition on the electrical properties of diamond-like carbon (DLC) films on glass substrates using RF plasma chemical vapor deposition, the respective Hall effect of the DLC films were evaluated and compared as a function of Nitrogen concentration. And film composition and atomic bond structure were characterized using Raman spectroscopy and XPS. Hall effect measurement revealed that the difference by nitrogen concentration of specific resistance are expressed as a function of the carrier density and the carrier mobility respectively. Considering the results of Raman spectroscopy and XPS revealed that the sp3 bond in the DLC film increases with increasing nitrogen concentration. Thus, it was suggested that the electrical properties and semiconductor properties of DLC films depend on the sp2/sp3 fraction in the films.
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