Abstract
70Ge isotopic nanocrystals embedded in SiO2 films were prepared by ion-implantation and neutron irradiation. Laser Raman scattering (LRS) and photoluminescence (PL) spectra were employed to characterize the samples. After 70Ge+ ions with the dose of 3×1016cm−2 and the energy of 150keV were implanted with subsequent annealing, the Raman peak of 70Ge nanocrystals is shown at around 305cm−1 due to isotopic effect. It blueshifts to higher wave numbers and the FWHM becomes narrower with increasing annealed temperature. However, The PL peak at 565nm from nanocrystals is not exhibited before neutron irradiation due to the quenching of the GeO4 tetrahedra, instead of GeO2 due to Ge insufficiency. A Raman peak position 262cm−1 corresponding to GeO4 tetrahedra, was formed after ion-implantation and could be annihilated by neutron irradiation and subsequent annealing, which help improve the luminescent property of Ge nanocrystals.
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