Abstract
An InGaAsP/AlGalnP quantum-well (QW) laser emitting at 703 nm on a GaAs substrate was demonstrated. Although quaternary InGaAsP is reported to have an immiscible region, compressively strained, thin InGaAsP was successfully grown on a GaAs substrate as an active layer. The ridge-waveguide structure of the laser has a 2-mum stripe and achieves extremely low operating current at a 40-mW CW from 20 to 80degC with a characteristic temperature of 151 K. These InGaAsP QW lasers have been operating for over 640 hours during a 40-mW-constant-power CW life test at 40degC. This laser diode is suitable as a light source for spectroscopic measurement due to its single longitudinal mode and stable fundamental lateral transverse mode.
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