Abstract
AbstractA flexible PIN diode sensor array process has been successfully demonstrated. Device fabrication of the thin film transistor (TFT) backplane occurred below 200 °C on a polyethylene naphthalate (PEN) substrate using indium gallium zinc oxide (IGZO) with a saturation mobility of 13.5 cm2/V‐s as the active semiconductor. The increased mobility enables the fabrication of higher speed and higher resolution sensor arrays in comparison to current amorphous silicon (a‐Si) technology.
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