Abstract
We have developed an ultra‐flexible organic photodetector with high sensitivity in near infrared regions. The photodetector exhibits good mechanical durability. The change in dark and photocurrent was approximately 10% after 500 cycles at a bending radius of 1.6 cm. Furthermore, the photodetector also shows good air stability. By combining the organic photodetector and low‐temperature polycrystalline silicon thin‐film transistor backplane, we developed a conformable imager with a high resolution of 508 dpi.
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