7 - Advanced silicon radiation detectors in the vacuum ultraviolet and the extreme ultraviolet spectral range

Abstract

In this chapter, the numerous challenges in reliable measurement of vacuum ultraviolet (VUV) and extreme ultraviolet (EUV) radiation with silicon radiation detectors will be discussed. The most severe issue is the high absorbance of any kind of material in these spectral ranges, which poses stringent requirements on possible detector designs. In particular, a high value of the spectral responsivity and the necessary radiation hardness put contradicting demands on the devices. To find a solution, it is necessary to describe and understand in detail the basic physical processes for the interaction between the radiation and the detector. The spectral responsivity of VUV and EUV detectors is measured using monochromatized synchrotron radiation as a radiation source and electrical substitution radiometers as primary detector standards. We will present selected types of silicon-based semiconductor detectors and discuss their performance in the context of the named aspects.