Abstract
This chapter provides an account of the performance of advanced self-assembled InAs quantum-dot (QD) lasers, achieved through five years of collaborative research and development between QD Laser, Inc., Fujitsu Laboratories Ltd, and The University of Tokyo. The chapter first reviews state-of-the-art self-assembling growth methods for high-density and highly uniform InAs QDs, and the use of Fabry–Pérot (FP) and distribute-feedback (DFB) lasers for optical communications and for extremely-high-temperature environments. The chapter then introduces the activities and products of QD Laser, Inc., a start-up company based on GaAs-based semiconductor quantum-dot, quantum-well and DFB technologies, and silicon hybrid quantum-dot lasers for future optical interconnections.
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