7.5 kW/mm2 current switch using AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistors on SiC substrates

Abstract

A fast high-power solid-state switch based on a novel large periphery multigate AlGaN/GaN metal-oxide-semiconductor heterostructure field effect transistor (MOSHFET) over 4H-SiC substrates is demonstrated. For a device with 1 mm periphery and 10 µm gate-drain spacing, 7.5 kW/mm2 of switched power with on-state resistance of 75 mΩ × mm2 is obtained. The pulse response of the MOSHFET switch exhibited a rise-time < 5 ns in pulsemode operation.