7‐4: High Mobility Hydrogenated Polycrystalline In‐Ga‐O (IGO:H) Thin‐Film Transistors formed by Solid Phase Crystallization

Abstract

Hydrogenated polycrystalline In‐Ga‐O (IGO:H) thin‐film transistor (TFT) was demonstrated by low‐temperature solid phase crystallization (SPC). The amorphous IGO:H was deposited by H2 doping during RF magnetron sputtering in Ar and O2 atmosphere. An intentionally doped H2 in IGO:H film suppressed the crystallization during the film deposition. The amorphous IGO:H film could be converted into the poly‐IGO:H film by SPC below 250 °C. A maximum field effect mobility of 50.6 cm2/Vs was obtained from the SPC poly‐IGO:H TFT. The polycrystalline oxide semiconductors (OSs) are simple and cost‐effective approach to achieve high‐performance OS TFTs for future displays.