7.3: Giant‐grain Poly‐Si by CW Laser Annealing of a‐Si with Cylindrical Microlens Array

Abstract

AbstractWe have developed a super large grain poly‐Si on glass by CW laser crystallization using cylindrical microlens array. A giant‐grain poly‐Si with average grain size of 15 μm × 15 μm was achieved. The n‐channel TFT using the poly‐Si exhibited the field‐effect mobility, on/off current ratio, threshold voltage and gate voltage swing of 470 cm2/Vs, ∼108, 0.1 V and 0.4 V/dec., respectively. On the other hand, the p‐channel TFT exhibited 192 cm2/Vs, ∼108, −2.2 V and 0.5 V/dec., respectively. A single crystalline Si on glass can be achieved with this technique.