Abstract

We fabricate a quantum magnetic field sensor based on the silicon vacancy centers in 6H–SiC using atomic force microscopy technique. The quantum sensing is based on optically detected magnetic resonance. To implement quantum scanning microscopy, we attach a single 6H–SiC nanoparticle on the tip of the atomic force microscopy cantilever. Our quantum sensors are characterized using optical spectroscopy and electron microscopy. The use of such probes significantly reduces the cost of a quantum sensor and enables the extension of quantum scanning microscopes to physiological and conductive environments.

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