Abstract
AbstractAmorphous oxide thin film transistor (TFT) arrays have been developed as TFT backplanes for large size active‐matrix organic light emitting diode (AMOLED) displays. An amorphous IGZO (Indium Gallium Zinc Oxide) bottom gate TFT with an etch‐stop layer (ESL) delivered excellent electrical performance with field‐ effect mobility of 21 cm2/V‐s, an on/off ratio of >108, and subthreshold slope (SS) of 0.29V/dec. A full color 19‐inch AMOLED display has been developed using the amorphous IGZO TFT backplane.
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