Abstract
In recent years, a great deal of effort has been devoted to developing oxide TFTs for active‐matrix displays. Especially, oxide TFTs are expected to take some space away from LTPS TFTs to drive the AM‐OLED displays because of their low cost, high uniformity, and capability for large‐size display manufacturing. A self‐aligned top‐gate TFT is proposed for the oxide TFT, and a method to improve the stability in terms of the bias temperature stress will be discussed.
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