Abstract
Indium Gallium Zinc Oxide (IGZO) films are deposited using plasma‐enhanced spatial Atomic Layer Deposition (sALD) on substrates as large as 32 cm x 35 cm. Excellent uniformity and thickness control leads to high‐performing and stable co‐planar top‐gate self‐aligned (SA) thin‐film transistors (TFTs), demonstrating the viability of atmospheric spatial ALD as a novel deposition technique for the flat‐panel display industry.
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