650 nm Resonant-cavity light-emitting diodes with dielectric distributed Bragg reflectors

Abstract

We report on the 650nm resonant-cavity light-emitting diodes (RCLEDs) with/without SiO2/Si3N4 dielectric distributed Bragg reflectors (DDBRs) theoretically and experimentally. The DDBRs upon the emitting window take the advantages of the high external quantum efficiency and a concentrated emission wavelength. These advantages can increase the light output power and optical gain. RCLEDs with DDBRs show the better performances than the RCLEDs without DDBRs, including a light output power of 2.9mW under 50mA bias current, an external quantum efficiency of 6.2%, a full width at half maximum of 8.96nm for emission spectrum over the 10–50mA bias current range, a turn-on voltage of 1.64V, a forward resistance of 2.9Ω, a rise time of 3.1ns and a 3dB bandwidth of 132MHz under 20mA bias current, respectively. The long term test for RCLEDs with DDBRs indicates that the constant light output power can be sustained at least 1008h and in room temperature.