6.4 An APS-H-Size 250Mpixel CMOS image sensor using column single-slope ADCs with dual-gain amplifiers

Abstract

Recently, there has been strong demand for high-resolution CMOS image sensors (large number of pixels) in the fields of security, science, and other specialized areas [1,2]. One of the major issues in realizing high-resolution image sensors is to speed up signal readout. For high-speed signal readout, it is necessary to accelerate pixel readout, AD conversion in column circuits, horizontal data output from column memories, and digital data output from the chip. Single-slope ADCs (SS-ADC) are the most common architecture in commercialized CMOS image sensors; increasing their counting clock frequency up to 2.376GHz [3] and using multiple ramp signals [4] can shorten the AD conversion period. However, the former has difficulty in maintaining the clock quality and suppressing power dissipation due to the high clock frequency, and the latter has difficulty in controlling the uniformity and the quality of the multiple ramp signals. Another significant issue is power consumption. Rise of power consumption with increase in number of columns results in non-uniformity of power supply to the column circuits due to IR drops. It may give rise to degradation of image quality such as fixed pattern noise, etc.