Abstract
An optimized top emitting (TE) electroluminescent quantum dot (ELQD) LED device design is achieved using Finite Difference Time Domain (FDTD) simulation by allowing the thicknesses for QD Emission layer (EML) and an adjacent hole transmission layer (HTL) layers to differ for R, G, and B subpixels. Optical extraction efficiencies for R, G, and B subpixels reach ∼15, ∼23, and ∼24 % resp., while small angular color shift is sustained. Angular characteristics of the device are very sensitive to the thickness variation of the individual material layers in the design, indicating the importance of thickness control in device fabrication process.
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