6.3: Study on micro-fabrication processes of triode device structures using vertically aligned n-type doped amorphous Si nanowires arrays

Abstract

Studies on micro-fabrication processes on integrating amorphous Si nanowires (a-SiNWs) arrays into a triode device structures were performed. Self-aligned technique was employed. Uniform a-SiNW array and gated a-SiNW triode device structure were obtained. The work provides a possibility for fabricating crosslink addressable arrays of a-SiNW triode devices on low cost and large area glass substrates.