Abstract
AbstractField emission display (FED) was fabricated with resist‐assisted patterning (RAP) process grown carbon nanotube (CNT) emitters. Electron emission current uniformity was strongly improved by homogenizing process with silicon‐on glass (SOG). The length of CNT emitters was homogenized with SOG coating and selective CNT etching process. Uniform CNT emitters were fabricated with the post‐growth homogenizing process. We fabricated 3 inch FED display with 32 μm sub‐pixel size with the CNT emitters. Electron emission current shows possible operation of the FED with 5 V/μm gate field. The electron emission characteristics and display performance were discussed.
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